Types of Photomasks
Our accomplishments are the result of Toppan Photomasks' taking a leadership role in lithography research and development.
Advanced semiconductors are being built at the subwavelength level. Subwavelength manufacturing, requires advanced photomasks because the circuit images printed on the silicon wafer are actually smaller than the wavelength of the lightsource used to expose the pattern.
Current state-of-the-technology, DUV steppers use an argon fluoride (ArF) laser with a wavelength of 193 nm, (0.193 micron), to build advanced chips with feature sizes of 130 nm (0.13 micron) and below.
To meet this subwavelength challenge advanced photomasks utilize reticle enhancement techniques, such as optical proximity correction (OPC) and phase shift features (PSM). These and other technologies pioneered by Toppan Photomasks will continue to enable the extension of optical lithography as the industry transitions to 90 nm and then 65 nm optical lithography over the next decade.
For more on our advanced technologies see: